Its all about ESD!!

High performance, low power dissipation and minimum area requirements are the driving forces for the scaling of modern semiconductor devices. Various devices like FinFET, III-V or SiGe based quantum well channel FinFET, Gate all around (GAA) or nanowire FET, Tunnel FETs, along with beyond CMOS solutions like Graphene FET (GFET) and Carbon Nano Tube (CNT FET) are projected to be the potential candidates for the emerging technology nodes. Although they provide superior scalability and improved performance, Electro- Static Discharge (ESD) reliability is foreseen as a serious challenge.

In the face of ever-growing demands for portable consumer electronics, flexible displays, low cost healthcare monitoring, and the like, researchers have looked upon the enormous solutions offered by flexible electronics. However, developing effective ESD handling strategies for these organic electronic devices is an ongoing research field.

Our research goal includes exploring the fundamental ESD behavior of these emerging technologies, establishing efficient ESD protection concepts and provide promising solutions for

Nano-electronics For Sleeker, Faster, Cheaper and Energy Efficient Systems

With the motto of delivering faster, sleeker, cheaper and energy efficient devices to the fraternity, the Nano group performs theoretical and experimental investigations on the plethora of 1-D and 2-D materials based devices. We focus on two broad areas of these emerging devices: electro-thermal transport and process optimization for low-power and high-frequency applications.

Our recent endeavours include:

  • Graphene FET for high frequency applications
  • Contact resistance minimization
  • Electro-thermal transport through multiwall carbon nanotubes and graphene FETs
  • Investigation of reliability of multiwall carbon nanotube based interconnects and MoSFETs.
  • Tunnel Fin-FET

Integrating power modules

GaN based High Electron Mobility Transistors are bound to change the future power electronics and energy scenario by minimizing losses and adding to system efficiency. We are working towards analyses, design and fabrication of more robust and efficient HEMTs. On long term reliability front, GaN-on-Si power devices for RF and power switching applications with focus on investigation of the potential reliability issues including Electrostatic Discharge effects in GaN HEMT technology.

Neuromorphic Memory Devices

The Human Brain is amazingly fast and power efficient when it comes to perform cognitive tasks. With a total capacity of around 1-1000TB memory and power consumption in the mW range it is an inspiring candidate for processors in computers to be used in the future. In order to implement Brain inspired processors we need to have a completely different kind of architecture and devices that mimic the highly complex and parallel architecture, neurons and synapses found in our Brain respectively. Analog memory cells showing synaptic behaviour along with multi-bit storage and self-correcting properties can prove highly effective in processors that can make a computer perform cognitive tasks, just like our brain does.