Publications

Journals

  1. Abhishek Mishra and Mayank Shrivastava, “Remote Joule Heating Assisted Carrier Transport in MWCNTs Probed at Nanosecond Time Scale”, Journal of Royal Society of Chemistry, 2016,18, 28932-28938 (DOI:1039/C6CP04497B).
  2. Vipin Joshi, Ankit Soni, Shree Prakash Tiwari and Mayank Shrivastava, “Computational Modeling Strategy for AlGaN/GaN HEMT Systems”, IEEE Transactions on Nanotechnology, Nov. 2016
  3. Kranthi Nagothu and Mayank Shrivastava, “On the ESD Behavior of Tunnel FET Devices”, to appear in IEEE Transactions on Electron Devices
  4. Kuruva Hemanjaneyulu and Mayank Shrivastava, “Fin Enabled Area Scaled Tunnel FET”, IEEE Transactions on Electron Devices, Vol. 62, No. 10, Oct. 2015
  5. Mayur Ghatge and Mayank Shrivastava, “Physical Insights On the Ambiguous Metal Graphene Interface and Proposal for Improved Contact Resistance”, IEEE Transactions on Electron Devices, Vol. 62, No. 12, Dec 2015
  6. B Sampath Kumar and Mayank Shrivastava, “Part I: On the Unification of Physics of Quasi-Saturation in LDMOS Devices”, to appear in IEEE Transactions on Electron Devices (after mandatory revision)
  7. B Sampath Kumar and Mayank Shrivastava, “Part II: Correlation Between Quasi Saturation and RF, ESD, Hot Carrier Degradation, Self Heating and Safe Operating Area Concerns”, to appear in IEEE Transactions on Electron Devices (after mandatory revision)
  8. Bhawani Shankar and Mayank Shrivastava, “Part-I: Unique ESD Behavior of AlGaN/GaN HEMTs”, Submitted to IEEE Transactions on Electron Devices
  9. Bhawani Shankar and Mayank Shrivastava, “Part-II: New Physical Insight into Unique Failure modes of AlGaN/GaN HEMTs under ESD Conditions”, Submitted to IEEE Transactions on Electron Devices
  10. Jhnanesh Somayaji, B.Sampath Kumar, M. S. Bhat, Mayank Shrivastava, “On the Device Design Guideline, Switching/RF Performance and HCI/ESD Reliability of Non-Conventional Drain extended MOS Devices for Advanced SoC Applications”, Submitted to IEEE Transactions on Electron Devices
  11. Milova Paul, Christian Russ, B Sampath Kumar, Harald Gossner and Mayank Shrivastava, “Physics of Current Filamentation in ggNMOS Revisited”, Submitted to IEEE Transactions on Electron Devices
  12. Abhishek Mishra and Mayank Shrivastava, “Nano-Second Time Resolved High field Transport through Multi-walled Carbon Nanotube”, submitted to Applied Physics Letters
  13. Ankit Soni, Vipin Joshi, Shree Prakash Tiwari and Mayank Shrivastava, “Device Design Guidelines for AlGaN/GaN HEMT System”, Submitted to IEEE Transactions on Nanotechnology

Conferences

  1. Adil Meersha, Harsha B Variar, Krishna Bharadwaj, Abhishek Mishra, Srinivasan Raghavan, Navakanta Bhat and Mayank Shrivastava, “Record Low Metal – (CVD) Graphene Contact Resistance Using Atomic Orbital Overlap Engineering”, IEEE International Electron Device Meeting, Dec. 5th – Dec. 7th, San Francisco, CA, USA, 2016
  2. Abhishek Mishra and Mayank Shrivastava, “Unique Current Conduction Mechanism through Multi Wall CNT Interconnects under ESD Conditions”, Proceedings of EOSESD Symposium, Anaheim, CA, USA, 11th – 14th September, 2016
  3. Abhishek Mishra and Mayank Shrivastava, “New Insights on the ESD Behavior and Failure Mechanism of Multi Wall CNTs”, Proceedings of IEEE International Reliability Physics Symposium, Pasadena, CA, USA, 17th – 19th April, 2016
  4. Bhawani Shankar and Mayank Shrivastava, “Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs”, Proceedings of IEEE International Reliability Physics Symposium, Pasadena, CA, USA, 17th – 19th April, 2016
  5. Milova Paul, Christian Russ, B Sampath Kumar, Harald Gossner and Mayank Shrivastava, “Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?”, to appear in the proceedings of IEEE VLSI Design Conference, Jan. 2017
  6. Bhawani Shankar and Mayank Shrivastava, “ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis”, to appear in the proceedings of IEEE VLSI Design Conference, Jan. 2017
  7. Adil Meersha, Sathyajit B and Mayank Shrivastava, “A Systematic Study on the Hysteresis Behavior and Reliability of MoS2 FET”, to appear in the proceedings of IEEE VLSI Design Conference, Jan. 2017
  8. N. K. Kranthi, Abhishek Mishra, Adil Meersha and Mayank Shrivastava, “ESD Behavior of Large Area CVD Graphene RF Transistors: Physical Insights and Technology Implications”, to appear in the proceedings of IEEE International Reliability Physics Symposium, USA, 2017
  9. Bhawani Shankar,……., Mayank Shrivastava, “Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs”, to appear in the proceedings of IEEE International Reliability Physics Symposium, USA, 2017